smd type 1.80 +0.1 -0.1 4.50 +0.1 -0.1 2.50 +0.1 -0.1 0.80 +0.1 -0.1 4.00 +0.1 -0.1 0.53 +0.1 -0.1 0.48 +0.1 -0.1 1.50 +0.1 -0.1 0.44 +0.1 -0.1 2.60 +0.1 -0.1 0.40 +0.1 -0.1 3.00 +0.1 -0.1 sot-89 unit: mm 1. base 2. collector 3. emiitter kst50; kst51; kst52 (bst50; bst51; bst52) features high current (max. 0.5 a) low voltage (max. 80 v) integrated diode and resistor. absolute maximum ratings ta = 25 parameter symbol rating unit kst50 60 v kst51 80 v kst52 90 v kst50 45 v kst51 60 v kst52 80 v emitter-base voltage v ebo 5v collector current (dc) i c 0.5 a peak collector current i cm 1.5 a base current i b 100 ma power dissipation t amb 25 * p d 1.3 w thermal resistance from junction to ambient * r th(j-a) 96 k/w thermal resistance from junction to solder point r th(j-s) 16 k/w junction temperature t j 150 storage temperature t stg -65 to +150 * device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm 2 . v cbo collector-base voltage v ceo collector-emitter voltage smd type smd type product specification sales@twtysemi.com 1of 2 http://www.twtysemi.com 4008-318-123
product specification smd type electrical characteristics ta = 25 symbol testconditons min typ max unit kst50 v be =0;v ce =45v 50 na kst51 v be =0;v ce =60v 50 na kst52 v be =0;v ce =80v 50 na emitter cutoff current i ebo v eb =4v,i c =0 50 na i c =150ma;v ce = 10 v 1000 i c =500 ma; v ce = 10v 2000 i c =500ma;i b =0.5ma 1.3 v i c =500ma;i b = 0.5ma;t j =150 1.3 v base to emitte rsaturation voltage v be(sat) i c =500ma;i b =0.5ma 1.9 v turn-on time t on i con =500ma;i bon = 0.5 ma; 400 ns turn-off time t off i boff = -0.5 ma 1500 ns transition frequency f t i c =500ma;v ce = 5 v; f = 100 mhz 200 mhz v ce(sat) parameter h fe dc current gain i ces collector cutoff current collector-emitter saturation voltage marking no. kst50 kst51 kst52 marking as1 as2 as3 kst50; kst51; kst52 (bst50; bst51; bst52) sales@twtysemi.com 2of 2 http://www.twtysemi.com 4008-318-123
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